Infineon IPG20N04S4L-07: A High-Performance OptiMOS Power MOSFET for Efficient Switching Applications

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPG20N04S4L-07 stands out as a premier solution, engineered to meet the rigorous demands of modern switching applications. As part of Infineon's esteemed OptiMOS™ power MOSFET family, this device is optimized to deliver exceptional performance in a compact, robust package.

This MOSFET is characterized by its ultra-low on-state resistance (R DS(on)) of just 2.0 mΩ (max. at V GS = 10 V). This critical parameter is a cornerstone of its efficiency, as it directly minimizes conduction losses when the device is fully switched on. Less energy is wasted as heat, making it ideal for high-current applications. Furthermore, the component boasts an outstanding gate charge (Q G) performance. The low total gate charge ensures swift switching transitions, which drastically reduces switching losses—a dominant source of inefficiency in high-frequency circuits. This combination of low R DS(on) and low Q G is the hallmark of the OptiMOS™ technology, enabling systems to achieve higher power density and superior energy efficiency.

The benefits extend beyond mere electrical specifications. The IPG20N04S4L-07 is housed in a space-saving D2PAK (TO-263) package, which offers an excellent footprint-to-performance ratio. This package is renowned for its superior thermal characteristics, allowing for effective heat dissipation away from the silicon die. This inherent thermal prowess ensures the device can operate reliably under continuous high-stress conditions, such as those found in DC-DC converters, motor control systems, and automotive applications, including electric power steering (EPS) and battery management systems (BMS).

Designers will also appreciate the device's enhanced avalanche ruggedness and its qualification according to the highest automotive standards. This makes it not only a high-performance choice but also an exceptionally reliable one for mission-critical systems where failure is not an option.

ICGOO FIND: The Infineon IPG20N04S4L-07 OptiMOS™ power MOSFET is a top-tier component that masterfully balances ultra-low conduction losses with fast switching capabilities. Its robust construction and thermal efficiency make it an indispensable choice for engineers designing next-generation power conversion systems that demand maximum efficiency and reliability in a compact form factor.

Keywords:

OptiMOS™

Low R DS(on)

Efficient Switching

Power MOSFET

Thermal Performance