Infineon IPD50P04P413ATMA2: High-Performance P-Channel Power MOSFET for Automotive and Industrial Applications
In the demanding worlds of automotive electronics and industrial systems, the selection of power switching components is critical to achieving reliability, efficiency, and compact design. The Infineon IPD50P04P413ATMA2 stands out as a premier solution, a high-performance P-Channel Power MOSFET engineered specifically to meet the rigorous challenges of these applications.
This MOSFET is characterized by its exceptionally low on-state resistance (RDS(on)) of just 40 mΩ (max.) at a gate-source voltage of -10 V. This key parameter is vital as it directly translates to minimized conduction losses, leading to higher system efficiency and reduced heat generation. Such efficiency is paramount in battery-operated systems and energy-conscious industrial equipment, where every watt saved counts.
A cornerstone of the IPD50P04P413ATMA2's design is its robustness and reliability under harsh conditions. It is qualified according to the stringent AEC-Q101 standard for automotive applications, ensuring it can withstand the extreme temperatures, vibrations, and operational stresses found in vehicles. This makes it an ideal choice for a wide array of automotive functions, including load switching, power management modules, and motor control systems.
Furthermore, the device features an enhanced avalanche ruggedness, providing an additional layer of protection against voltage spikes and transients that are common in automotive and industrial environments. Its P-channel configuration offers a significant advantage in circuit design by simplifying the gate driving requirements, especially in high-side switch topologies, as it does not require a charge pump for turn-on. This contributes to a reduction in overall component count and board space, supporting more compact and cost-effective designs.
Housed in a space-saving, thermally efficient TOLL (TO-Leadless) package, the MOSFET ensures excellent power dissipation in a minimal footprint. The package's low profile and superior thermal performance are crucial for modern, densely packed PCBs.
ICGOOODFIND: The Infineon IPD50P04P413ATMA2 is a top-tier P-Channel MOSFET that delivers a powerful combination of high efficiency, proven automotive-grade reliability, and design simplification, making it an exceptional choice for next-generation automotive and industrial power systems.
Keywords: AEC-Q101, Low RDS(on), P-Channel MOSFET, Automotive Grade, High Efficiency.
