Infineon IRFR7740TRPBF: A High-Performance N-Channel Power MOSFET for Efficient Switching Applications

Release date:2025-10-21 Number of clicks:143

Infineon IRFR7740TRPBF: A High-Performance N-Channel Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demand on switching components. At the heart of many power conversion systems, from DC-DC converters to motor drives, lies the Power MOSFET. The Infineon IRFR7740TRPBF stands out as a premier N-Channel MOSFET engineered to meet these rigorous demands, offering an exceptional blend of low losses, high reliability, and robust performance.

A key highlight of the IRFR7740TRPBF is its exceptionally low on-state resistance (RDS(on)) of just 1.8 mΩ (max. at VGS = 10 V). This ultra-low resistance is critical for minimizing conduction losses when the device is fully switched on. With less energy wasted as heat, systems can achieve higher overall efficiency, run cooler, and require less bulky heat sinking, which directly contributes to reduced system size and cost.

Complementing its low conduction loss is its optimized switching performance. The device is built using Infineon's advanced proprietary process technology, which ensures low gate charge (Qg) and low capacitance. This allows for very fast switching transitions, reducing the time spent in the high-loss linear region. The result is a significant reduction in switching losses, which is paramount for high-frequency operation in switch-mode power supplies (SMPS) and other applications where switching speed translates directly to efficiency.

The IRFR7740TRPBF is housed in a compact and robust DPAK (TO-252) package, making it an excellent choice for space-constrained PCB designs. This package offers a low thermal resistance path from the silicon die to the heatsink, enhancing its power dissipation capabilities. Rated for a drain-to-source voltage (VDS) of 40V and a continuous drain current (ID) of 192A, it delivers outstanding power handling in a small form factor. Furthermore, its avalanche ruggedness ensures it can withstand unexpected voltage spikes and stressful conditions, thereby improving the reliability and longevity of the end application.

Typical applications where this MOSFET excels include:

High-efficiency DC-DC converters in servers and telecom equipment.

Motor control and drive circuits in automotive systems (e.g., electric power steering, braking).

Power management in consumer electronics and battery protection circuits.

Synchronous rectification in low-voltage, high-current power supplies.

ICGOODFIND: The Infineon IRFR7740TRPBF is a top-tier N-Channel power MOSFET that sets a high standard for efficiency and reliability. Its defining characteristics—ultra-low RDS(on), fast switching speed, and avalanche energy robustness—make it an indispensable component for designers aiming to push the boundaries of performance in power electronics, ensuring cooler operation, higher power density, and more efficient systems.

Keywords: Power MOSFET, Low RDS(on), High Efficiency, Switching Performance, Avalanche Rugged

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