Infineon IPD60R380P6: High-Performance 600V CoolMOS™ Power Transistor for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics demands semiconductors that deliver exceptional performance. The Infineon IPD60R380P6 stands out as a premier 600V CoolMOS™ Power Transistor engineered specifically to meet this challenge in a wide array of high-efficiency switching applications.

At the core of this device is Infineon's advanced superjunction (SJ) technology. This innovation is pivotal in achieving an outstandingly low specific on-state resistance (R DS(on)) of just 380 mΩ. This key characteristic directly translates to minimized conduction losses, allowing the transistor to handle significant power levels with reduced heat generation. The result is a cooler-running, more reliable system that requires less complex and costly thermal management.

Beyond its static performance, the IPD60R380P6 excels in dynamic operation. It features exceptionally low gate charge (Q G) and low output capacitance (C OSS), which are critical for achieving fast and efficient switching transitions. This leads to a substantial reduction in switching losses, especially at high frequencies. Designers can leverage this to increase the switching frequency of their power supplies (SMPS), enabling the use of smaller passive components like inductors and transformers, thereby boosting overall power density.

The robust 600V voltage rating ensures high reliability and provides a sufficient safety margin for operation in universal mains applications (85 V AC – 305 V AC) and power factor correction (PFC) stages. This makes it an ideal choice for demanding environments, including:

Switch-Mode Power Supplies (SMPS) for servers, PCs, and industrial equipment

Power Factor Correction (PFC) circuits

Lighting ballasts and LED drivers

Motor control and drive systems

Packaged in the industry-standard TO-220 package, the IPD60R380P6 offers both excellent thermal performance and ease of assembly. Its combination of low R DS(on), superior switching characteristics, and high voltage robustness establishes it as a cornerstone component for engineers designing the next generation of efficient and compact power conversion systems.

ICGOODFIND: The Infineon IPD60R380P6 is a benchmark high-voltage MOSFET, leveraging cutting-edge CoolMOS™ technology to achieve an optimal balance of ultra-low conduction loss and superior switching performance. It is an indispensable component for engineers aiming to maximize efficiency and power density in modern AC-DC conversion and motor drive applications.

Keywords: CoolMOS™, High-Efficiency Switching, Low R DS(on), Low Gate Charge, 600V Rating.