Infineon BSZ088N03LSG 30V N-Channel MOSFET: Datasheet, Application Circuit, and Features
The Infineon BSZ088N03LSG is a state-of-the-art N-Channel MOSFET engineered using Infineon's advanced OptiMOS™ technology. Designed for a maximum drain-source voltage (VDS) of 30V, this power MOSFET is a benchmark for efficiency and compact performance in low-voltage applications. Its primary strength lies in delivering an exceptional balance of extremely low on-state resistance (RDS(on)) and low gate charge (Qg), which directly translates to reduced conduction and switching losses.
This device is housed in a super compact SuperSO8 (SSO8) package, making it an ideal choice for space-constrained modern electronics where board real estate is at a premium. It is particularly optimized for use in synchronous rectification within switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits, enabling higher efficiency power conversion.
Key Features and Specifications
The standout specifications of the BSZ088N03LSG, as detailed in its datasheet, include:
Low RDS(on): A remarkably low maximum RDS(on) of just 0.88 mΩ at VGS = 10 V. This minimizes power loss and heat generation during operation.
High Continuous Current: Capable of handling a continuous drain current (ID) of up to 100 A at a case temperature of 25°C, showcasing its high-power handling capability in a small form factor.
Low Gate Charge: With a typical total gate charge (Qg) of 64 nC, the MOSFET can be switched on and off very quickly, which is crucial for high-frequency switching applications.
Optimized for Logic-Level Drive: The device features a low threshold voltage (VGS(th)), allowing it to be driven directly by 3.3 V or 5 V logic controllers without the need for additional gate drive circuitry, simplifying design.
Typical Application Circuit
A common application for the BSZ088N03LSG is in the synchronous buck converter stage of a voltage regulator module (VRM), such as those used to power CPUs and GPUs. In this circuit:
1. The BSZ088N03LSG serves as the synchronous rectifier (low-side switch).
2. It works in tandem with a control MOSFET (high-side switch).
3. A dedicated PWM controller drives both MOSFETs 180 degrees out of phase.
4. When the high-side switch turns off, the low-side BSZ088N03LSG turns on, providing a low-resistance path for the inductor current to ground, thereby improving efficiency by reducing the voltage drop that would occur across a standard diode.
Proper layout is critical for such high-performance MOSFETs. Designers must ensure:
A low-inductance path for the power loop.
A tight and direct gate drive connection to minimize parasitic inductance.
Adequate cooling, as the small package can have significant thermal impedance.
ICGOOODFIND Summary
The Infineon BSZ088N03LSG stands out as a superior component for designers seeking to maximize efficiency and power density. Its industry-leading combination of ultra-low RDS(on) and a minimalist footprint makes it an almost perfect solution for demanding low-voltage, high-current switching tasks. Whether for server power supplies, automotive systems, or high-performance computing, this MOSFET delivers the robust performance and reliability expected from the OptiMOS™ family.
Keywords: OptiMOS™, Low RDS(on), Synchronous Rectification, SuperSO8, Power Efficiency.
