Infineon BSC004NE2LS5: High-Performance OptiMOS 5 25V Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. Addressing these critical demands, Infineon Technologies introduces the BSC004NE2LS5, a standout member of the advanced OptiMOS™ 5 25V family. This power MOSFET is engineered to set a new benchmark for performance in low-voltage applications, offering an exceptional blend of low losses and high switching frequency capability.

The core of this device's superiority lies in its revolutionary trench technology. The OptiMOS™ 5 process achieves a significantly reduced figure-of-merit (R DS(on) x Q G), which is a key indicator of overall performance. With an ultra-low maximum on-state resistance (R DS(on)) of just 0.4 mΩ at 10 V (V GS), the BSC004NE2LS5 minimizes conduction losses. This translates directly into higher efficiency, less heat generation, and the potential for smaller heatsinks or even passive cooling solutions. Concurrently, its low gate charge (Q G) ensures swift switching transitions, reducing switching losses—a crucial advantage for high-frequency operation.

This combination makes the BSC004NE2LS5 an ideal solution for a wide array of demanding applications. It is particularly well-suited for:

Synchronous Rectification in Switch-Mode Power Supplies (SMPS): Its low R DS(on) is critical for maximizing efficiency in DC-DC converters, especially in server, telecom, and industrial power systems.

Motor Control and Drives: The device can handle high currents efficiently, making it perfect for driving motors in power tools, robotics, and automotive systems.

Battery Management Systems (BMS): Its efficiency helps protect battery life in applications like e-bikes, drones, and portable devices by minimizing energy wasted as heat.

Load Switch Circuits: The robust performance ensures minimal voltage drop and high reliability when switching high currents.

Housed in an SuperSO8 (LFPAK) package, the BSC004NE2LS5 also excels in power density. This compact footprint allows designers to shrink their PCB layouts without compromising on thermal performance or current handling capability, which is rated for a continuous drain current (I D) of 210 A at 25°C.

ICGOOODFIND: The Infineon BSC004NE2LS5 exemplifies the pinnacle of low-voltage MOSFET technology, delivering unmatched efficiency and power density through its ultra-low on-resistance and superior switching characteristics. It is a transformative component for designers pushing the boundaries of performance in modern power conversion systems.

Keywords: Power MOSFET, OptiMOS™ 5, Low R DS(on), High Efficiency, Synchronous Rectification.